Phase Separation in GaMnAs Layers Grown by Laser Pulsed Deposition

• Published in: Physics of the solid state Vol. 60; no. 5; pp. 943 - 949
• Main Authors: Kun’kova, Z. E., Gan’shina, E. A., Golik, L. L., Danilov, Yu. A., Kudrin, A. V., Kovalev, V. I., Zykov, G. S., Markin, Yu. V., Vikhrova, O. V., Zvonkov, B. N.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.05.2018; Springer; Springer Nature B.V
• Subjects: ARSENIC COMPOUNDS; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Conditioning; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; ENERGY BEAM DEPOSITION; Ferromagnetism; GALLIUM COMPOUNDS; HALL EFFECT; KERR EFFECT; LASER RADIATION; LAYERS; Magnetic measurement; Magnetism; MAGNETOMETERS; MANGANESE COMPOUNDS; PARAMAGNETISM; Phase separation; Physics; Physics and Astronomy; PULSED IRRADIATION; Pulsed laser deposition; PULSES; Solid State Physics; SPECTRA; SPECTROSCOPY
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783418050153

GaMnAs layers grown by pulsed laser deposition were studied by magneto-optical transversal Kerr effect spectroscopy, spectral ellipsometry, resistivity and the Hall effect measurements, and magnetometry. The growth regimes for magnetically inhomogeneous layers containing Mn-enriched ferromagnetic regions with different composition and sizes were established. The layers grown at a temperature of 300°C exhibit a ferromagnetic behavior at temperatures below 80 K, which is conditioned by the presence of local ferromagnetic (Ga,Mn)As regions in the paramagnetic matrix. The nature of peculiarities in the TKE spectrum of these layers is discussed.