Critical wavefunctions in disordered graphene

In order to elucidate the presence of non-localized states in doped graphene, a scaling analysis of the wavefunction moments, known as inverse participation ratios, is performed. The model used is a tight-binding Hamiltonian considering nearest and next-nearest neighbors with random substitutional i...

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Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 24; no. 25; p. 255305
Main Authors Barrios-Vargas, J E, Naumis, Gerardo G
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 27.06.2012
Institute of Physics
Subjects
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Decay
Electron states
Electronic structure of disordered solids
Exact sciences and technology
Graphene
Inclusions
Insulators
Inverse
Physics
Substitutional impurities
Theories and models; localized states
Wavefunctions
Substitutional impurities
Tight binding approximation
Graphene
Doping
Scaling laws
Nearest neighbor approximation
Wave functions
Disordered crystals
Power law
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Summary:In order to elucidate the presence of non-localized states in doped graphene, a scaling analysis of the wavefunction moments, known as inverse participation ratios, is performed. The model used is a tight-binding Hamiltonian considering nearest and next-nearest neighbors with random substitutional impurities. Our findings indicate the presence of non-normalizable wavefunctions that follow a critical (power-law) decay, which show a behavior intermediate between those of metals and insulators. The power-law exponent distribution is robust against the inclusion of next-nearest neighbors and growing the system size.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/24/25/255305