Freestanding circular GaN grating fabricated by fast-atom beam etching

We report here a top-down process for fabricating a freestanding circular GaN grating. The circular gratings are defined by electron-beam lithography and realized by fast-atom beam (FAB) etching. The silicon substrate below the GaN grating region is completely removed to make the circular grating su...

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Bibliographic Details
Published inApplied physics. A, Materials science & processing Vol. 97; no. 1; pp. 39 - 43
Main Authors Wang, Yongjin, Hu, Fangren, Wakui, Masashi, Hane, Kazuhiro
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer-Verlag 01.10.2009
Springer
Subjects
Beams (radiation)
Characterization and Evaluation of Materials
Condensed Matter Physics
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Diffraction gratings
Electron beam lithography
Etching
Exact sciences and technology
Gallium nitrides
Gratings (spectra)
Iii-v semiconductors
Invited Paper
Machines
Manufacturing
Materials science
Nanocomposites
Nanostructure
Nanotechnology
Optical and Electronic Materials
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Physics and Astronomy
Processes
Surface treatments
Surfaces and Interfaces
Thin Films
73.40.Ty
81.65.Cf
42.79.Dj
Reflectivity
Reflection spectrum
Atomic beams
Electron beam lithography
Optical properties
Free-standing film
Diffraction gratings
Etching
Gallium nitride
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Summary:We report here a top-down process for fabricating a freestanding circular GaN grating. The circular gratings are defined by electron-beam lithography and realized by fast-atom beam (FAB) etching. The silicon substrate below the GaN grating region is completely removed to make the circular grating suspended in space. The optical responses of the fabricated GaN gratings are characterized in reflectance measurements. The polarization-independent responses of circular gratings are experimentally demonstrated, corresponding well with the theoretical prediction. This work represents an important step in combining GaN-based material with freestanding nanostructures.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-009-5376-y