Light Output Improvement of InGaN-Based Light-Emitting Diodes by Microchannel Structure

We propose a microchannel structure with deep holes to enhance the extraction efficiency of InGaN-based light-emitting diodes (LEDs). Two different depth microchannel LEDs are examined experimentally. One has air holes penetrated through the active layer and the other does not. It is found that the...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 19; no. 15; pp. 1175 - 1177
Main Authors Chang, Liann-Be, Chang, Yuan-Hsiao, Jeng, Ming-Jer
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2007
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Diffraction
Extraction
Extraction efficiency
Gallium nitride
Light emitting diodes
light output power
light-emitting diodes (LEDs)
Microchannel
microchannel structure
Microchannels
Optical reflection
Photonic crystals
Photonics
Power generation
Quantum well devices
Refractive index
Solid state lighting
Waveguides
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Summary:We propose a microchannel structure with deep holes to enhance the extraction efficiency of InGaN-based light-emitting diodes (LEDs). Two different depth microchannel LEDs are examined experimentally. One has air holes penetrated through the active layer and the other does not. It is found that the light extraction efficiency in the LED with the penetrated air holes is significant h larger than that in the LED without penetrating holes. The reason can be attributed to the microchannel waveguide behaviors. In comparison to the conventional LEDs, the light output power of our fabricated LEDs with and without penetrating holes improved by 43.5% and 5.1%, respectively.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2007.901591