A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology

• Published in: IEEE photonics technology letters Vol. 19; no. 4; pp. 197 - 199
• Main Authors: Huang, Wei-Kuo, Liu, Yu-Chang, Hsin, Yue-Ming
• Format: Journal Article
• Language: English
• Published: New York IEEE 15.02.2007; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bias; CMOS; CMOS process; CMOS technology; Complementary metal-oxide-semiconductor (CMOS); High speed; Isolation technology; MOSFET circuits; Optical fiber communication; Oxides; Photodetectors; photodiode (PD); Photodiodes; Semiconductor diodes; Semiconductors; Silicon; silicon (Si); Substrates
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2006.890055

This work investigates a new silicon (Si) photodiode (PD) by standard complementary metal-oxide-semiconductor (CMOS) process. The basic structure of the proposed Si PD is formed by multiple p-n diodes with shallow trench isolation oxide in between p- and n-region from Taiwan Semiconductor Manufacturing Company 0.18-mum CMOS technology. The proposed PD demonstrates a responsivity of 0.37 A/W at zero bias (lambda=823nm). At reverse bias (V R ) of 14.3 V, the fabricated PD exhibits a high responsivity of 0.74 A/W, a -3-dB electrical bandwidth of 1.6 GHz, and an eye diagram at 3.5 Gb/s