On-chip SiGe transmission line measurements and model verification up to 110 GHz

• Published in: IEEE microwave and wireless components letters Vol. 15; no. 2; pp. 65 - 67
• Main Authors: Zwick, T., Tretiakov, Y., Goren, D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.2005; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Coplanar transmission lines; De-embedding; Design. Technologies. Operation analysis. Testing; Electromagnetic measurements; Electromagnetic modeling; Electronics; Exact sciences and technology; Frequency; Germanium silicon alloys; Integrated circuits; Microstrip; Millimeter wave technology; on-wafer measurements; Predictive models; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon germanium; transmission line interconnect; Transmission line measurements; Semiconductor alloys; on-wafer measurements; Integrated circuit design; Logic design; Electromagnetic wave; Contact line; Microstrip line; Parametric method; transmission line interconnect; Transmission line; Simulation; De-embedding; Standard cell library; Wafer
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2004.842817

On-chip microstrip transmission lines have been measured on-wafer from below 1 GHz up to 110 GHz. Using different pad de-embedding techniques as well as a technique based on two transmission lines of different length, the characteristic transmission line parameters have been accurately determined. The results are compared against simulation results from an electromagnetic full-wave solution and the parametric IBM model which is available in the technology's design kit.