High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS

Depth profiles of ultralow energy (0.2–0.5 keV) B ion implants in Si(0 0 1) samples are measured by high-resolution Rutherford backscattering spectroscopy. The boron profile does not show a narrow surface concentration peak which is usually observed in the measurement of secondary ion mass spectrosc...

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Bibliographic Details
Published inCurrent applied physics Vol. 3; no. 1; pp. 9 - 11
Main Authors Kimura, Kenji, Oota, Yukitoshi, Nakajima, Kaoru, Büyüklimanli, Temel H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2003
Subjects
Boron profiling
High-resolution
RBS
Ultrashallow implantation
RBS
High-resolution
85.40.Ry
Boron profiling
Ultrashallow implantation
61.72.Ss
82.80.Yc
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Summary:Depth profiles of ultralow energy (0.2–0.5 keV) B ion implants in Si(0 0 1) samples are measured by high-resolution Rutherford backscattering spectroscopy. The boron profile does not show a narrow surface concentration peak which is usually observed in the measurement of secondary ion mass spectroscopy. The obtained boron profiles roughly agree with TRIM simulation even at 0.2-keV B ion implantation.
ISSN:1567-1739
1878-1675
DOI:10.1016/S1567-1739(02)00227-4