Computer Simulations of Diffraction Effects due to Stacking Faults in β-SiC: II, Experimental Verification

Earlier results from computer simulation studies suggest a correlation between the spatial distribution of stacking errors in the β‐SiC structure and features observed in XRD patterns of the material. Reported here are experimental results obtained from two types of nominally β‐SiC specimens, which...

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Published inJournal of the American Ceramic Society Vol. 84; no. 11; pp. 2645 - 2651
Main Authors Pujar, Vijay V., Cawley, James D.
Format Journal Article
LanguageEnglish
Published Westerville, Ohio American Ceramics Society 01.11.2001
Blackwell
Subjects
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals; microstructure
Exact sciences and technology
microstructure
modeling/model
Physics
silicon carbide
Stacking faults and other planar or extended defects
Structure of solids and liquids; crystallography
Stacking faults
Inorganic compounds
Stacking sequence
Polytypism
Crystal chemistry
Silicon carbides
Ceramics
XRD
Experimental study
High-resolution methods
Beta form
Transmission electron microscopy
Spatial distribution
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Summary:Earlier results from computer simulation studies suggest a correlation between the spatial distribution of stacking errors in the β‐SiC structure and features observed in XRD patterns of the material. Reported here are experimental results obtained from two types of nominally β‐SiC specimens, which yield distinct XRD data. These samples were analyzed using high‐resolution transmission electron microscopy (HRTEM) and the stacking error distribution was directly determined. The HRTEM results compare well to those deduced by matching the XRD data with simulated spectra, confirming the hypothesis that the XRD data are indicative not only of the presence and density of stacking errors, but also that it can yield information regarding their distribution. Moreover, the stacking error population in both specimens is related to their synthesis conditions, and is similar to the relation developed by others to explain the formation of the corresponding polytypes.
Bibliography:ArticleID:JACE2645
ark:/67375/WNG-9H5T3PS1-P
istex:6B0209973EC63342DB198B4008EEF5A030F3816F
Currently at Materials and Simulation Technical Center, Goodrich Corp., Brecks‐ville, OH 44141.
‡
T. E. Mitchell—contributing editor
As described in our previous papers, a stacking error is an error in the regular cubic stacking sequence. Thus, a single stacking error generates a twin fault, stacking errors in adjacent layers generate an intrinsic fault, stacking errors separated by an error‐free layer generate an extrinsic fault, and stacking errors separated by two or more error‐free layers generate microtwins.
Based in part on the thesis submitted by author VVP for the Ph.D. degree Materials Science and Engineering, Case Western Reserve University, 1997.
Member, American Ceramic Society.
Research performed under NASA‐CWRU Cooperative Agreement on Ceramic Processing (NASA Grant No. NCC–3–404).
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ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.2001.tb01066.x