Shallow donors in GaN

• Published in: Physica Status Solidi (b) Vol. 240; no. 2; pp. 330 - 336
• Main Authors: Freitas Jr, J. A., Moore, W. J., Shanabrook, B. V., Braga, G. C. B., Koleske, D. D., Lee, S. K., Park, S. S., Han, J. Y.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.11.2003; WILEY‐VCH Verlag; Wiley
• Subjects: 71.35.−y; 71.55.Eq; 78.30.Fs; 78.55Cr; 78.66.Fd; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states; Exact sciences and technology; Exciton-mediated interactions; Excitons and related phenomena; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Defect states; Inorganic compounds; Energy levels; Ground states; Gallium nitrides; Photoluminescence; Binary compounds; Experimental study; Secondary ion mass spectra; Impurities; Binding energy; Donor center; Bound exciton; III-V semiconductors
• ISSN: 0370-1972; 1610-1634; 1521-3951
• DOI: 10.1002/pssb.200303402

High‐resolution, variable temperature PL experiments were performed in the spectral region associated with recombination processes involving the ground and excited states of the neutral donor bound excitons. High‐resolution infrared measurements in combination with high‐sensitive SIMS unambiguously identified Si and O shallow donors and yield their ground state binding energies. These binding energies are in excellent agreement with values obtained by the analysis of the two‐electron‐satellite PL spectra considering the participation of ground and excited state donor bound excitons. This work clarifies conflicting aspects existing in donor identification and the binding energies of the impurities and excitons. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)