Photoluminescence investigation of Si as p-type dopant in AlGaAs grown by molecular beam epitaxy on high-index planes

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Bibliographic Details
Published inSemiconductor science and technology Vol. 11; no. 12; pp. 1830 - 1837
Main Authors Galbiati, N, Grilli, E, Guzzi, M, Brusaferri, L, Pavesi, L, Henini, M
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.12.1996
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Aluminium arsenides
Gallium arsenides
Inorganic compounds
Semiconductor materials
Ternary compounds
Photoluminescence
Molecular beam epitaxy
Doped materials
Experimental study
Silicon additions
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/11/12/011