Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology

The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics (MD) simulations. This work focuses on the effects of the implantation energy, dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defec...

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Bibliographic Details
Published inActa mechanica solida Sinica Vol. 29; no. 2; pp. 111 - 119
Main Authors Wang, Bing, Gu, Bin, Zhang, Hongbin, Feng, Xiqiao
Format Journal Article
LanguageEnglish
Published Singapore Elsevier Ltd 01.04.2016
Springer Singapore
Subjects
Approximation
Classical Mechanics
defect rate
Defects
Energy distribution
Engineering
Hydrogen
Hydrogen ions
Implantation
Ion implantation
Molecular dynamics
Smart-Cut technology
Surfaces and Interfaces
Theoretical and Applied Mechanics
Thin Films
分子动力学模拟
切割技术
数值分析
智能切割
氢离子
离子分布
离子注入工艺
缺陷率
defect rate
Smart-Cut technology
molecular dynamics
ion implantation
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Summary:The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics (MD) simulations. This work focuses on the effects of the implantation energy, dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation. Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature. By introducing a new parameter of defect rate, the influence of the processing parameters on defect rate is also quantitatively examined.
Bibliography:42-1121/O3
Smart-Cut technology ion implantation molecular dynamics defect rate
The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics（MD） simulations.This work focuses on the effects of the implantation energy,dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation.Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature.By introducing a new parameter of defect rate,the influence of the processing parameters on defect rate is also quantitatively examined.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0894-9166
1860-2134
DOI:10.1016/S0894-9166(16)30100-8