Effect of controlled asymmetry on the switching characteristics of ring-based MRAM design

• Published in: IEEE transactions on nanotechnology Vol. 5; no. 3; pp. 249 - 254
• Main Authors: Mani, A.S., Geerpuram, D., Baskaran, V.S., Metlushko, V.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2006; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Asymmetry; Chirality; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Fluid flow; Integrated circuits; Integrated circuits by function (including memories and processors); Magnetic and optical mass memories; Magnetic anisotropy; Magnetic domain walls; magnetic memories; Magnetic switching; Magnetization; magnetization processes; magnetization reversal; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics; Magnetoresistive random access memory; Magnetosphere; Nanotechnology; Permalloy; Perpendicular magnetic anisotropy; Polarization; Random access memory; Remanence; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Shape; Storage and reproduction of information; Switching; Vortices; Magnetoresistive device; Magnetization reversal; Nickel base alloys; Magnetization; Random access memory; magnetization processes; Switching; Magnetic storage; Non volatile memory; Magnetic anisotropy; Integrated circuit; Vortex; magnetic memories
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2006.874041

It was suggested that the shape effects are responsible for the vortex formation and chirality in circular ring elements. We found that the introduction of well-controlled asymmetry into permalloy rings provides precise control of the switching mechanism and leads to improved switching characteristics.