Millimeter-Wave Devices and Circuit Blocks up to 104 GHz in 90 nm CMOS

• Published in: IEEE journal of solid-state circuits Vol. 42; no. 12; pp. 2893 - 2903
• Main Authors: Heydari, B., Bohsali, M., Adabi, E., Niknejad, A.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.12.2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 100 GHz amplifier; 100 GHz oscillator; Amplification; Amplifiers; Applied sciences; Circuit properties; Circuits; CMOS millimeter-wave integrated circuits; CMOS technology; Design. Technologies. Operation analysis. Testing; Devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Extrapolation; f_{\max}; Gain; high-speed integrated circuits; Integrated circuits; maximum stable gain; Microwave and submillimeter wave devices, electron transfer devices; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Millimeter wave communication; Millimeter wave devices; Millimeter wave radar; Millimeter wave technology; millimeter- wave amplifiers; millimeter-wave device modeling; Noise levels; Optimization methods; Oscillators; Semiconductor device modeling; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; transmission lines; Millimeter wave devices; Output power; High-speed integrated circuits; millimeter- wave amplifiers; Microwave; Modeling; Optimization; fmax; Millimetric wave; Transmission line; Complementary MOS technology; Hybrid model; 100 GHz oscillator; CMOS integrated circuits; Millimeter wave integrated circuits; Microwave amplifier; Multistage circuit; maximum stable gain; Voltage controlled oscillator; CMOS millimeter-wave integrated circuits; 100 GHz amplifier; Compact design; Millimeter wave amplifiers; transmission lines; Microwave oscillator; Active component; Power amplifier; Low-power electronics; Gain; millimeter-wave device modeling
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2007.908743

A systematic methodology for layout optimization of active devices for millimeter-wave (mm-wave) application is proposed. A hybrid mm-wave modeling technique was developed to extend the validity of the device compact models up to 100 GHz. These methods resulted in the design of a customized 90 nm device layout which yields an extrapolated of 300 GHz from an intrinsic device . The device is incorporated into a low-power 60 GHz amplifier consuming 10.5 mW, providing 12.2 dB of gain, and an output of 4 dBm. An experimental three-stage 104 GHz tuned amplifier has a measured peak gain of 9.3 dB. Finally, a Colpitts oscillator operating at 104 GHz delivers up to 5 dBm of output power while consuming 6.5 mW.