Models of the static and dynamic behavior of stripe geometry lasers

The rate equations used to find carrier and photon densities in semiconductor lasers are extended to include a spatial variation of the carrier density in the junction plane and combined with a field equation for calculation of the intensity distribution. The equations are solved for both static and...

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 19; no. 6; pp. 953 - 960
Main Author Buus, J.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1983
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Summary:The rate equations used to find carrier and photon densities in semiconductor lasers are extended to include a spatial variation of the carrier density in the junction plane and combined with a field equation for calculation of the intensity distribution. The equations are solved for both static and dynamic cases, and the model is able to account for nonlinear light current characteristics, near field displacements, and self-sustained pulsations in lasers without a built-in guiding mechanism. The results are compared to both experimental results and predictions from other models.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1983.1071964