Models of the static and dynamic behavior of stripe geometry lasers
The rate equations used to find carrier and photon densities in semiconductor lasers are extended to include a spatial variation of the carrier density in the junction plane and combined with a field equation for calculation of the intensity distribution. The equations are solved for both static and...
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Published in | IEEE journal of quantum electronics Vol. 19; no. 6; pp. 953 - 960 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
IEEE
01.06.1983
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Subjects | |
Online Access | Get full text |
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Summary: | The rate equations used to find carrier and photon densities in semiconductor lasers are extended to include a spatial variation of the carrier density in the junction plane and combined with a field equation for calculation of the intensity distribution. The equations are solved for both static and dynamic cases, and the model is able to account for nonlinear light current characteristics, near field displacements, and self-sustained pulsations in lasers without a built-in guiding mechanism. The results are compared to both experimental results and predictions from other models. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.1983.1071964 |