Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone

A simplified encapsulation strategy for metal‐oxide based TFTs, using ozone instead of water as an oxygen source in a low‐temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy‐ and time‐consuming post‐treatm...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 25; no. 20; pp. 2821 - 2825
Main Authors Fakhri, Morteza, Babin, Nikolai, Behrendt, Andreas, Jakob, Timo, Görrn, Patrick, Riedl, Thomas
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 28.05.2013
WILEY‐VCH Verlag
Subjects
ALD
Encapsulation
Equipment Design
Equipment Failure Analysis
Gases - chemistry
Materials Testing
Membranes, Artificial
metal oxide
Metal oxide semiconductors
Metal oxides
Metals - chemistry
Oxides - chemistry
Ozone
Semiconductor devices
Semiconductors
Thin film transistors
thin-film transistor
Titanium dioxide
Transistors, Electronic
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Summary:A simplified encapsulation strategy for metal‐oxide based TFTs, using ozone instead of water as an oxygen source in a low‐temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy‐ and time‐consuming post‐treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2O3, TiO2, ZrO2) and metal‐oxide channel semiconductors (e.g., zinc–tin–oxide (ZTO), indium–gallium–zinc–oxide (IGZO)).
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ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201300549