Triple-junction InGaP/GaAs/Ge solar cells integrated with polymethyl methacrylate subwavelength structure

•A high aspect ratio subwavelength structure was realized.•The subwavelength structure was integrated onto a triple-junction solar cell.•The fabricated subwavelength structure showed enhanced optical properties.•The power-conversion efficiency was greatly increased. GaAs-based triple-junction tandem...

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Published inApplied surface science Vol. 320; pp. 901 - 907
Main Authors Kim, Dae-Seon, Jeong, Yonkil, Jeong, Hojung, Jang, Jae-Hyung
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 30.11.2014
Elsevier
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Summary:•A high aspect ratio subwavelength structure was realized.•The subwavelength structure was integrated onto a triple-junction solar cell.•The fabricated subwavelength structure showed enhanced optical properties.•The power-conversion efficiency was greatly increased. GaAs-based triple-junction tandem solar cells incorporating an antireflection coating (ARC) consisting of a subwavelength structure (SWS) and bilayer thin films are reported. A high aspect ratio SWS was realized on polymethyl methacrylate (PMMA) using a two-step etched silicon template and a stamping method. The fabricated PMMA SWS consisting of a two-dimensional array of nanoscale needles with a period of 300nm and an aspect ratio exceeding 2.3 exhibited significantly improved optical performance. The average reflectance of the PMMA SWS was reduced from 7.1 to 4.4% as compared to that of the bare PMMA film, which resulted in an improvement of the transmittance from 90.7 to 92.9% in the wavelength range between 300 and 1700nm. By integrating the PMMA SWS together with a TiO2/Al2O3 bilayer AR coating onto the top of an InGaP/GaAs/Ge triple-junction solar cell, the surface reflection of the solar cell could be minimized. The integrated PMMA SWS on the bilayer thin film ARC enhanced the power-conversion efficiency (η) of the triple-junction solar cell from 30.2 to 31.6% and from 37.8 to 40.8% under 1 and 157 sun condition, respectively.
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ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2014.09.138