Enhancement of Data Retention Time for 512-Mb DRAMs Using High-Pressure Deuterium Annealing
We have investigated the effect of high-pressure deuterium annealing (HPDA) for retention time improvement of 512-Mb dynamic random access memories with 3D cell transistors. Compared with a control sample annealed in a conventional forming gas (4% H 2 /N 2 ), additional annealing in a high-pressure...
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Published in | IEEE transactions on electron devices Vol. 55; no. 12; pp. 3599 - 3601 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.12.2008
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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