The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment

In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (Ea) of a GaN Schottky diode with plasma treatment. T...

Full description

Saved in:
Bibliographic Details
Published inMicroelectronics and reliability Vol. 59; pp. 44 - 48
Main Authors Chiu, Hsien-Chin, Chi, Ji-Fan, Kao, Hsuan-Ling, Chu, Chia-Yi, Cho, Kuan-Liang, Chien, Feng-Tso
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.04.2016
Subjects
Barriers
Diodes
Electrostatic discharges
ESD
Fluorine
Gallium nitrides
GaN
Low-frequency noise
Microelectronics
Noise
Schottky diodes
Low-frequency noise
GaN
Fluorine
ESD
Online AccessGet full text

Cover

More Information
Summary:In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (Ea) of a GaN Schottky diode with plasma treatment. This experiment compares the Schottky diode with CF4 and CHF3 plasma treatment, respectively with a standard Schottky diode to determine the characteristics and to assess the low-frequency noise and the ESD protection ability. •The ESD protection of GaN SBD with fluorine-based plasma treatment was studied.•The LFN is used to determine the activation energy (Ea) of GaN SBD.•SBD with CF4 and CHF3 plasma treatment achieved a lower LFN and better ESD protection ability.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2016.01.014