Heteroepitaxial Growth of InBi(001)

InBi is a topological nodal line semimetal with strong spin-orbit coupling. It is epitaxially compatible with III-V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi and...

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Bibliographic Details
Published inMolecules (Basel, Switzerland) Vol. 29; no. 12; p. 2825
Main Authors Rehaag, Thomas J, Bell, Gavin R
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 13.06.2024
MDPI
Subjects
Annealing
Electrons
Energy consumption
Epitaxy
III–V semiconductor
InBi
InSb
Molecular beam epitaxy
Semiconductors
topological semimetal
United Kingdom > UK
molecular beam epitaxy
topological semimetal
InSb
InBi
III–V semiconductor
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Summary:InBi is a topological nodal line semimetal with strong spin-orbit coupling. It is epitaxially compatible with III-V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi and the tendency to form droplets. We investigate approaches for epitaxial growth of InBi films on InSb(001) substrates using MBE and periodic supply epitaxy (PSE). It was not possible to achieve planar, stoichiometric InBi heteroepitaxy using MBE growth over the parameter space explored. However, pseudomorphic growth of ultra-thin InBi(001) layers could be achieved by PSE on InSb(001). A remarkable change to the in-plane epitaxial orientation is observed.
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content type line 23
ISSN:1420-3049
1420-3049
DOI:10.3390/molecules29122825