Silicon for thin-film transistors
We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary me...
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| Published in | Thin solid films Vol. 430; no. 1; pp. 15 - 19 |
|---|---|
| Main Authors | , , , |
| Format | Journal Article Conference Proceeding |
| Language | English |
| Published |
Lausanne
Elsevier B.V
22.04.2003
Elsevier Science |
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| Abstract | We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials. |
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| AbstractList | We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials. |
| Author | Cheng, I-Chun Gleskova, Helena Wagner, Sigurd Wu, Ming |
| Author_xml | – sequence: 1 givenname: Sigurd surname: Wagner fullname: Wagner, Sigurd email: wagner@princeton.edu organization: Department of Electrical Engineering and POEM, Princeton University, Princeton, NJ 08544, USA – sequence: 2 givenname: Helena surname: Gleskova fullname: Gleskova, Helena organization: Department of Electrical Engineering and POEM, Princeton University, Princeton, NJ 08544, USA – sequence: 3 givenname: I-Chun surname: Cheng fullname: Cheng, I-Chun organization: Department of Electrical Engineering and POEM, Princeton University, Princeton, NJ 08544, USA – sequence: 4 givenname: Ming surname: Wu fullname: Wu, Ming organization: Aegis Semiconductor, 78 Olympia Avenue, Woburn, MA 01810, USA |
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| Keywords | Thin films Transistors Flexible substrates Amorphous material Flexible structure Electron mobility Material selection Silicon Thin film transistor Microcrystal Nanocrystal |
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| SubjectTerms | Applied sciences Electronics Exact sciences and technology Flexible substrates Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin films Transistors |
| Title | Silicon for thin-film transistors |
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