Silicon for thin-film transistors

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary me...

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Bibliographic Details
Published inThin solid films Vol. 430; no. 1; pp. 15 - 19
Main Authors Wagner, Sigurd, Gleskova, Helena, Cheng, I-Chun, Wu, Ming
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier B.V 22.04.2003
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Flexible substrates
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin films
Transistors
Thin films
Transistors
Flexible substrates
Amorphous material
Flexible structure
Electron mobility
Material selection
Silicon
Thin film transistor
Microcrystal
Nanocrystal
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Summary:We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(03)00121-4