Efficient and realistic device modeling from atomic detail to the nanoscale

• Published in: Journal of computational electronics Vol. 12; no. 4; pp. 592 - 600
• Main Authors: Fonseca, J. E., Kubis, T., Povolotskyi, M., Novakovic, B., Ajoy, A., Hegde, G., Ilatikhameneh, H., Jiang, Z., Sengupta, P., Tan, Y., Klimeck, G.
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.12.2013; Springer Nature B.V
• Subjects: Algorithms; Approximation; Computation; Electrical Engineering; Energy; Engineering; Equilibrium; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mechanical Engineering; Nanoelectronics; Nanotechnology devices; Nanowires; Optical and Electronic Materials; Quantum transport; Semiconductor devices; Theoretical; Topological insulators; Transistors; Quantum dot; Parallel computing; Poisson; Greens function formalism (NEGF); NEMO; Tight-binding; Transport and phonons; Nanoelectronics; Strain
• ISSN: 1569-8025; 1572-8137
• DOI: 10.1007/s10825-013-0509-0

As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through efficient computational approaches and quantitatively modeling new generations of nanoelectronic devices as well as predicting novel device architectures and phenomena. This article seeks to provide updates on the current status of the tool and new functionality, including advances in quantum transport simulations and with materials such as metals, topological insulators, and piezoelectrics.