CVD Growth of 3C-SiC on 4H/6H Mesas
This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C‐SiC...
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Published in | Chemical vapor deposition Vol. 12; no. 8-9; pp. 531 - 540 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
01.08.2006
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Summary: | This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C‐SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C‐SiC mesa heterofilms on top of 4H‐SiC mesas with atomic‐scale steps always results in numerous observable dislocations threading through the 3C‐SiC epilayer. High‐resolution X‐ray diffraction (HRXRD) and high resolution cross‐sectional transmission electron microscopy (HRXTEM) measurements indicate non‐trivial, in‐plane, lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step‐free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C‐SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single‐crystal heteroepitaxial 3C‐SiC films.
By properly nucleating 3C–SiC on top of a patterned array of (0001) 4H–SiC mesas with surfaces completely free of atomic scale steps, growth of 3C–SiC mesa heterofilms free of extended crystal defects can be achieved. Detailed characterization, including AFM, TEM, and X‐ray diffraction techniques, indicates that the presence or absence of steps at the 3C/4H interface critically impacts the quality, defect structure, and relaxation mechanisms of single‐crystal heteroepitaxial films. |
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Bibliography: | istex:FE03CDECF26B39E6B9C90AFC33442D0000B4967C The work at NASA Glenn Research Center was carried out under the Ultra Efficient Engine Technology, Advanced Electrical Components, Revolutionary Aeropropulsion Concepts, and Director's Discretionary Funds projects. The authors gratefully acknowledge the valuable assistance of Michelle Mrdenovich, Beth Osborn, Emye Benavage, Drago Androjna, Glenn Beheim, Gary Hunter, Lawrence Matus, David Larkin, Kimala Laster, Charles Blaha, Mike Artale, Jose Gonzalez, and Pete Lampard at NASA Glenn Research Center. ArticleID:CVDE200506460 ark:/67375/WNG-NQJWN92Q-4 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 BNL-80404-2008-JA DE-AC02-98CH10886 Doe - Office Of Science |
ISSN: | 0948-1907 1521-3862 |
DOI: | 10.1002/cvde.200506460 |