Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires

• Published in: Nanoscale research letters Vol. 10; no. 1; p. 1
• Main Authors: Zervos, M., Mihailescu, C. N., Giapintzakis, J., Othonos, A., Travlos, A., Luculescu, C. R.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.08.2015; Springer Nature B.V
• Subjects: Chemistry and Materials Science; Materials Science; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Sulfur; Indium tin oxide; Nanowires
• ISSN: 1931-7573; 1556-276X
• DOI: 10.1186/s11671-015-0995-z

Sn-doped In 2 O 3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H 2 S between 300 to 600 °C. We observe the existence of cubic bixbyite In 2 O 3 and hexagonal SnS 2 after processing the Sn:In 2 O 3 nanowires to H 2 S at 300 °C but also cubic bixbyite In 2 O 3 , which remains dominant, and the emergence of rhombohedral In 2 (SO 4 ) 3 at 400 °C. The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4 eV corresponding to band edge emission from In 2 O 3 . In contrast, Sn:In 2 O 3 nanowires grown on glass at 500 °C can be treated under H 2 S only below 200 °C which is important for the fabrication of Cu 2 S/Sn:In 2 O 3 core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells.