Base current relaxation transient in reverse emitter-base bias stressed silicon bipolar junction transistors

The base current relaxation transient following reverse emitter-base (EB) bias stress and its effect on time-to-failure (TTF) determination are examined in self-aligned and nonself-aligned silicon bipolar junction transistors (BJTs) with thermal and deposited base oxide. A quantitative model indicat...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 44; no. 5; pp. 792 - 800
Main Authors Neugroschel, A., Chih-Tang Sah, Carroll, M.S., Pfaff, K.G.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1997
Subjects
Charge carrier processes
Circuits
Degradation
Electron traps
Forward contracts
Silicon
Stress measurement
Thermal stresses
Tunneling
Voltage
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Summary:The base current relaxation transient following reverse emitter-base (EB) bias stress and its effect on time-to-failure (TTF) determination are examined in self-aligned and nonself-aligned silicon bipolar junction transistors (BJTs) with thermal and deposited base oxide. A quantitative model indicates that the transient is due to a reduction of the stress-generated positive charge trapped in the oxide layer near the emitter-base junction due to holes tunneling from oxide hole traps to silicon band states or SiO/sub 2//Si interface traps. The neutral oxide hole traps may be quickly recharged through hole tunneling or hole injection into the oxide during further reverse-bias stress. A delay time of /spl sim/10/sup -3/ s was observed after the termination of stress before base current relaxation begins, which affects the extraction of the ac operation TTF from dc stress measurements.
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.568041