Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures

• Published in: 12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors,2007-09-09 - 2007-09-13 Vol. 19; no. Suppl 1; pp. 111 - 114
• Main Authors: Wosinski, Tadeusz, Figielski, Tadeusz, Morawski, Andrzej, Makosa, Andrzej, Osinniy, Viktor, Wrobel, Jerzy, Sadowski, Janusz
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.12.2008; Springer; Springer Nature B.V
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Fysik; Integrated circuits; Integrated circuits by function (including memories and processors); Magnetism; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics; Materials; Materials Science; Nanoscale materials and structures: fabrication and characterization; Natural Sciences; Naturvetenskap; Optical and Electronic Materials; Physical Sciences; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Coercive Field; Magnetic Domain Wall; Magnetization Direction; Magnetic Transition Temperature; Extra Resistance; Magnetoresistive device; Gallium; Non volatile memory; Integrated circuit; Magnetic domain walls; Nanostructure; Nanowires; Domain wall; Magnetic field; Memory effect
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9516-x

Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.