Electromigration detection by means of low-frequency noise measurements in thin-film interconnections

• Published in: IEEE electron device letters Vol. 6; no. 11; pp. 606 - 608
• Main Authors: Diligenti, A., Neri, B., Bagnoli, P.E., Barsanti, A., Rizzo, M.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.1985; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Atomic measurements; Current density; Current measurement; Density measurement; Electromigration; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Low-frequency noise; Noise measurement; Power measurement; Resistors; Transistors; Very low frequency; Impurity; Aluminium; 1/f noise; Background noise; Thin film; Electrical connection; Interconnection; Integrated circuit; Electrodiffusion; Silicon; Spectral density; Resistor
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/EDL.1985.26247

Low-frequency noise power spectral densities associated with displacements of atoms caused by electromigration were measured on Al-Si (1 percent) resistors at various current densities in the frequency range 5 × 10 -2 ÷ 2 Hz. The temperature of the resistors was the one set by the current density itself, all the samples having been tested at room temperature. After noise measurement, each resistor was subjected to the current density at which the measurement was performed up to failure. The total electromigration power, measured in the frequency interval 0.1 ÷ 1 Hz was plotted as a function of the failure time for three different series of resistors obtained by means of an RF sputtering process. The measurement system and the characteristic features of the electromigration spectra are described.