Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering: Structural and optical studies

• Published in: Journal of non-crystalline solids Vol. 354; no. 19-25; pp. 2291 - 2295
• Main Authors: Amrani, R., Benlekehal, D., Baghdad, R., Senouci, D., Zeinert, A., Zellama, K., Chahed, L., Sib, J.D., Bouizem, Y.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2008; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; FTIR measurements; Materials science; Nanocrystalline materials; Nanocrystals; Nanocrystals and nanoparticles; Nanoscale materials and structures: fabrication and characterization; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Photoconductivity; Physics; Raman spectroscopy; Silicon; Sputtering; Nanocrystals; FTIR measurements; Optical properties; 78.30.−j; 78.20.Ci; Silicon; 78.67.Bf; Photoconductivity; Raman spectroscopy; Sputtering; Raman spectra; Silicon; Nanocrystals; Sputtering; Optical properties; FTIR measurements; Photoconductivity; Raman spectroscopy; 78.67.Bf; 78.20.Ci; 78.30.-j; Infrared spectra; Radiofrequency; Cathode sputtering; Photothermal spectroscopy; Absorption spectra; Nanocrystal; Radiofrequency sputtering; Structural analysis
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2007.10.044

In order to contribute to the understanding of the optoelectronics properties of hydrogenated nanocrystalline silicon films, a detailed study has been conducted. Structural analysis (infrared absorption and Raman scattering spectroscopy), combined with optical measurements spectroscopy (optical transmission, photothermal deflection spectroscopy and photoconductivity) were used to characterize the films. The samples were elaborated by radio-frequency magnetron sputtering of crystalline silicon target, under a hydrogen (70%) and Argon (30%) gas mixture, at three different total pressures (2, 3 and 4Pa) and varying substrate temperature (100, 150 and 200°C). The results clearly indicate that the films deposited at 2Pa are amorphous, while for 3 and 4Pa nanocrystalline structures are observed. These results are discussed in the framework of the existing models.