New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation

We present experimental evidence for negative differential resistance in n-channel heterostructure insulated gate transistors (HIGFET's) at high gate voltages. The negative resistance is explained by an increase in the gate current related to the electron heating in the two-dimensional electron...

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Bibliographic Details
Published inIEEE electron device letters Vol. 7; no. 2; pp. 78 - 80
Main Authors Shur, M.S., Arch, D.K., Daniels, R.R., Abrokwah, J.K.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.02.1986
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Diodes
Electron emission
Electronics
Exact sciences and technology
FETs
Frequency
Gallium arsenide
Insulation
Parasitic capacitance
Resistance heating
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Transistors
Voltage
Field effect transistor
Isolated gate field effect transistor
Negative resistance
Heterojunction
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Summary:We present experimental evidence for negative differential resistance in n-channel heterostructure insulated gate transistors (HIGFET's) at high gate voltages. The negative resistance is explained by an increase in the gate current related to the electron heating in the two-dimensional electron gas. This mechanism is similar to that causing the negative differential resistance in NERFET's. However, much smaller parasitic capacitance in HIGFET's may allow us to reach higher frequencies of operation.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26300