A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel

• Published in: IEEE electron device letters Vol. 26; no. 9; pp. 643 - 645
• Main Authors: Lin, H.-C., Lee, M.-H., Su, C.-J., Huang, T.-Y., Lee, C.C., Yang, Y.-S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.09.2005; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Biosensors; Channels; Chemical and biological sensors; Devices; Electronics; Etching; Exact sciences and technology; Fabrication; General equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Lithography; Manufacturing; Nanobioscience; Nanocomposites; Nanomaterials; Nanoscale devices; Nanostructure; Nanowires; Physics; poly-Si; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensing devices; sensor device; Sensor phenomena and characterization; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Spacers; Thin film transistors; thin-film transistors (TFTs); Transistors; Performance evaluation; sensor device; Spacer; Measurement sensor; Polycrystal; Thin film transistor; poly-Si; Nanowires; Cost lowering; Logic devices; thin-film transistors (TFTs)
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2005.853669

A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.