Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs

We investigated the performances of GaN junctionless fin-shaped field-effect transistors (FinFETs) with two different types of gate structures; overlapped- and partially covered-gate. DC, low-frequency noise (LFN), and pulsed I-V characterization measurements were performed and analyzed together in...

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Bibliographic Details
Published inIEEE electron device letters Vol. 41; no. 6; pp. 832 - 835
Main Authors Im, Ki-Sik, An, Sung Jin, Theodorou, Christoforos G., Ghibaudo, Gerard, Cristoloveanu, Sorin, Lee, Jung-Hee
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Institute of Electrical and Electronics Engineers
Subjects
Aluminum gallium nitride
current collapse
Electronics
Engineering Sciences
Field effect transistors
FinFET
FinFETs
Gallium nitride
GaN junctionless
generation-recombination noise
LF noise
Logic gates
low-frequency noise
Micro and nanotechnologies
Microelectronics
Noise
Noise generation
Performance evaluation
Semiconductor devices
Voltage measurement
Wide band gap semiconductors
Current collapse
generation-recombination noise
GaN
FinFET
Nanochannel
Junctionless
Low-frequency noise
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Summary:We investigated the performances of GaN junctionless fin-shaped field-effect transistors (FinFETs) with two different types of gate structures; overlapped- and partially covered-gate. DC, low-frequency noise (LFN), and pulsed I-V characterization measurements were performed and analyzed together in order to identify the conduction mechanism and examine both the interface and buffer traps in the devices. The fabricated GaN junctionless device with overlapped-gate structure exhibits improved DC and noise performance compared to the device with partially covered-gate, even though its gate length is much larger. The LFN behavior was found to be dominated by carrier number fluctuations (CNF). At off-state, the device with partially covered-gate exhibits generation-recombination (g-r) noise on top of 1/f noise. This superposition is correlated with the severe current collapse revealed by pulsed I-V measurements. In contrast, the device with overlapped-gate shows clear 1/f behavior without g-r noise.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2991164