Analysis and scaling of Kelvin resistors for extraction of specific contact resistivity

• Published in: IEEE electron device letters Vol. 6; no. 3; pp. 105 - 108
• Main Authors: Loh, W.M., Saraswat, K., Dutton, R.W.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.1985; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Arm; Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Electronics; Exact sciences and technology; Interfaces; Kelvin; Laplace equations; Numerical analysis; Resistors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface resistance; Scale reduction; Digital simulation; Dimensions; Contact resistance; Electric contact; Metal; Optimization; Thin film; Substrate; Computer program; Square shape; Measurement method; Diffusion
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/EDL.1985.26061

An accurate numerical analysis of Kelvin resistors used for direct interfacial contact resistance measurements is presented. Curves that allow extraction of true specific contact resistivity from measured specific contact resistivity are given for different ratios of square contact window size (l) to square diffusion tap width (w). Scaling transformations are proposed to extract curves for different feature sizes. It has been shown that when l is made smaller than w, the extracted value of the specific contact resistivity (ρ ce ) can be significantly higher than the true specific contact resistivity (ρ c ), especially for low values of ρ c .