Carbon nanotube network-silicon oxide non-volatile switches

• Published in: Nature communications Vol. 5; no. 1; p. 5673
• Main Authors: Liao, Albert D., Araujo, Paulo T., Xu, Runjie, Dresselhaus, Mildred S.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 08.12.2014; Nature Publishing Group
• Subjects: 639/301/119/995; 639/766/25; 639/925/357/73; Humanities and Social Sciences; multidisciplinary; Science; Science (multidisciplinary)
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/ncomms6673

The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate. The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here, the authors demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nano-crystal silicon filament in silica.