High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy

High-quality InGaN films were successfully grown on a Ga-polarity GaN underlayer by plasma-assisted molecular-beam epitaxy (rf-MBE) with good reproducibility. X-ray diffraction (XRD) results showed that there was no phase separation of In with the In mole fraction up to 0.36. Intense photoluminescen...

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Published inJapanese Journal of Applied Physics Vol. 39; no. 12B; pp. L1270 - L1272
Main Authors Shen, Xu-Qiang, Ide, Toshihide, Shimizu, Mitsuaki, Hara, Shiro, Okumura, Hajime
Format Journal Article
LanguageEnglish
Published 01.01.2000
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Summary:High-quality InGaN films were successfully grown on a Ga-polarity GaN underlayer by plasma-assisted molecular-beam epitaxy (rf-MBE) with good reproducibility. X-ray diffraction (XRD) results showed that there was no phase separation of In with the In mole fraction up to 0.36. Intense photoluminescence emissions from the InGaN films were obtained. Clear evidence was obtained for the difference in the quality between InGaN films grown on the Ga-polarity and those grown on N-polarity GaN buffer layers, in which the Ga-polarity GaN buffer is preferred. Our results provide a basis for fabricating high-quality InGaN/(Al, Ga)N heterostructures for optical and electronic device applications by rf-MBE.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L1270