Multicomponent semiconductors based on the system GaAs-CdSe. Receiving. Properties

for the first time (for given compositions), solid solutions of the GaAs-CdSe system have been obtained, certified on the basis of X-ray and submicroscopical studies as substitution solid solutions with sphalerite and wurtzite structure. The consistent interrelated patterns in changes with compositi...

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Published inJournal of physics. Conference series Vol. 1210; no. 1; pp. 12064 - 12071
Main Authors Kirovskaya, I A, Mironova, E V, Vasina, M V, Brueva, O Yu, Murashova, A O, Polonyankin, D A, Blesman, A I, Zverev, M A
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2019
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Summary:for the first time (for given compositions), solid solutions of the GaAs-CdSe system have been obtained, certified on the basis of X-ray and submicroscopical studies as substitution solid solutions with sphalerite and wurtzite structure. The consistent interrelated patterns in changes with composition changes of the system, crystallochemical and structural properties have been revealed: parameters - a, c; crystal lattices interplanar distances - dhkl; theoretical calculated crystal density - ρr; the average number of the most displayed particles in the components - nav. The pH values of the system components' surfaces isoelectric state have been determined, which fit into the faintly-acid range. On the ground of the set of obtained results, revealed patterns, correlations between them, a conclusion has been made about a possible preliminary certification of the obtained solid solutions of systems similar to the studied one and a possible facilitated way of searching for advanced, promising materials for creating measuring cells for main gases micro impurities, in particular ammonia.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1210/1/012064