Frequency dependence of capacitance of Au/n-GaAs Schottky diode under hydrostatic pressure

Au/n-GaAs Schottky barrier diodes have been fabricated and the characteristics of capacitance versus frequency under hydrostatic pressure and forward bias were investigated. Although the capacitance is independent of frequency over 50 kHz, it was found that the capacitance strongly depends on forwar...

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Bibliographic Details
Published inInternational journal of electronics Vol. 89; no. 10; pp. 745 - 752
Main Authors CANKAYA, Güven, UCAR, Nazim
Format Journal Article
LanguageEnglish
Published London Taylor & Francis Group 01.10.2002
Taylor & Francis
Subjects
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Pressure dependence
Defect density
Band structure
Frequency dependence
Voltage dependence
Donor
Bias voltage
Hydrostatic pressure
Capacitance
Schottky barrier diode
Electrical characteristic
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Summary:Au/n-GaAs Schottky barrier diodes have been fabricated and the characteristics of capacitance versus frequency under hydrostatic pressure and forward bias were investigated. Although the capacitance is independent of frequency over 50 kHz, it was found that the capacitance strongly depends on forward bias and hydrostatic pressure due to a change of ionized defect concentration in the low-frequency region. These pressure-dependent studies may be of importance for the application of this material as a pressure-sensitive capacitor.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0020-7217
1362-3060
DOI:10.1080/0020721031000093138