A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics

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Bibliographic Details
Published inSemiconductor science and technology Vol. 19; no. 6; pp. 685 - 689
Main Authors Yan, Changling, Ning, Yongqiang, Qin, Li, Zhang, Shumin, Wang, Qing, Zhao, Lumin, Jin, Zhenhua, Sun, Yanfang, Tao, Getao, Liu, Yun, Chu, Guoqiang, Wang, Lijun, Jiang, Huilin
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.06.2004
Institute of Physics
Subjects
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers; laser diodes
Gallium arsenides
Temperature
Inorganic compounds
Output power
Ternary compounds
Threshold current
Experimental study
Indium arsenides
Fabrication
Vertical cavity laser
Surface emitting lasers
Oxidation
Heterostructures
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/19/6/004