Investigation of GaAs/AlGaAs superlattice by photoreflectance method

The GaAs/AlGaAs superlattice grown by metal-organic chemical vapour deposition (MOCVD) was investigated by photoreflectance (PR) spectroscopy. Optical transitions over the whole band structure were measured at room temperature. Different laser pump beams (632 and 532 nm) were used to clarify the nat...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 1038; no. 1; pp. 12124 - 12129
Main Authors Goryacheva, V D, Mironova, M S, Komkov, O S
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.06.2018
Subjects
Aluminum gallium arsenides
Current carriers
Laser beams
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Physics
Room temperature
Superlattices
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Summary:The GaAs/AlGaAs superlattice grown by metal-organic chemical vapour deposition (MOCVD) was investigated by photoreflectance (PR) spectroscopy. Optical transitions over the whole band structure were measured at room temperature. Different laser pump beams (632 and 532 nm) were used to clarify the nature of the PR signal formation. Charge carriers transport over minibands was revealed by using long-wave modulation. An acceptable correlation of theoretical and experimental results was achieved for low-energy transitions. Optical transitions relating to the edges of the first and the second minibands for electrons, heavy and light holes were clearly observed experimentally.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1038/1/012124