Device Technology for GaN Mixed-Signal Integrated Circuits

A device technology platform for implementing GaN mixed-signal integrated circuits is presented. High-performance GaN enhancement-/depletion-mode (E/D-mode) high electron mobility transistors (HEMTs) are the key devices for implementing digital/analog functional blocks, while Schottky diodes and lat...

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Published inJapanese Journal of Applied Physics Vol. 52; no. 11; pp. 11NH05 - 11NH05-4
Main Authors Chen, Kevin Jing, Kwan, Alex Man Ho
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2013
Subjects
Circuits
Control systems
Devices
Gallium nitrides
High electron mobility transistors
Integrated circuits
Platforms
Semiconductor devices
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Summary:A device technology platform for implementing GaN mixed-signal integrated circuits is presented. High-performance GaN enhancement-/depletion-mode (E/D-mode) high electron mobility transistors (HEMTs) are the key devices for implementing digital/analog functional blocks, while Schottky diodes and lateral field-effect rectifiers provide useful components for sensing circuits. As a case study, a GaN 2-bit quantizer circuit fabricated on that platform is demonstrated, leading a way to highly integrated system-on-chip solutions for protection/sense/control applications.
Bibliography:(Color online) Schematic platform for GaN mixed-signal ICs. (Color online) DC characteristics of (a) E-mode HEMT, (b) D-mode HEMT, and (c) lateral field-effect rectifier. (Color online) Schematic circuit diagram of the two-level quantizer chip. (Color online) Microphotograph of a two-level quantizer chip. (Color online) Schematic layout of the 2DEG resistor ladder. (Color online) (a) $I_{\text{ref}}$--$V_{\text{ref}}$ characteristics of the 2DEG resistor ladder, and (b) its voltage division characteristics. At each temperature, the voltage division ratios were measured as $V_{\text{ref}}$ varied from 2 to 8 V. (Color online) Voltage transfer characteristics of the bootstrapped comparator at different $V_{\text{REF}}$ from room temperature (RT) to 250 °C. (Color online) Oscilloscope captures of a 5 MHz triangular wave signal at $V_{\text{in}}$, the output waveform $V_{\text{out1}}$ at the upper rail, and the $V_{\text{out2}}$ at the lower rail. The measurements were conducted at 25, 100, and 250 °C respectively. (Color online) Total power consumption of the two-level quantizer measured from 25 to 250 °C. The power consumed in the 2DEG resistor ladder and the comparators is also plotted.
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content type line 23
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.11NH05