Device Technology for GaN Mixed-Signal Integrated Circuits

A device technology platform for implementing GaN mixed-signal integrated circuits is presented. High-performance GaN enhancement-/depletion-mode (E/D-mode) high electron mobility transistors (HEMTs) are the key devices for implementing digital/analog functional blocks, while Schottky diodes and lat...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 52; no. 11; pp. 11NH05 - 11NH05-4
Main Authors Chen, Kevin Jing, Kwan, Alex Man Ho
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2013
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Summary:A device technology platform for implementing GaN mixed-signal integrated circuits is presented. High-performance GaN enhancement-/depletion-mode (E/D-mode) high electron mobility transistors (HEMTs) are the key devices for implementing digital/analog functional blocks, while Schottky diodes and lateral field-effect rectifiers provide useful components for sensing circuits. As a case study, a GaN 2-bit quantizer circuit fabricated on that platform is demonstrated, leading a way to highly integrated system-on-chip solutions for protection/sense/control applications.
Bibliography:(Color online) Schematic platform for GaN mixed-signal ICs. (Color online) DC characteristics of (a) E-mode HEMT, (b) D-mode HEMT, and (c) lateral field-effect rectifier. (Color online) Schematic circuit diagram of the two-level quantizer chip. (Color online) Microphotograph of a two-level quantizer chip. (Color online) Schematic layout of the 2DEG resistor ladder. (Color online) (a) $I_{\text{ref}}$--$V_{\text{ref}}$ characteristics of the 2DEG resistor ladder, and (b) its voltage division characteristics. At each temperature, the voltage division ratios were measured as $V_{\text{ref}}$ varied from 2 to 8 V. (Color online) Voltage transfer characteristics of the bootstrapped comparator at different $V_{\text{REF}}$ from room temperature (RT) to 250 °C. (Color online) Oscilloscope captures of a 5 MHz triangular wave signal at $V_{\text{in}}$, the output waveform $V_{\text{out1}}$ at the upper rail, and the $V_{\text{out2}}$ at the lower rail. The measurements were conducted at 25, 100, and 250 °C respectively. (Color online) Total power consumption of the two-level quantizer measured from 25 to 250 °C. The power consumed in the 2DEG resistor ladder and the comparators is also plotted.
ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.11NH05