Si(Li) detector with ultra-thin entrance window on the diffusive lithium side

Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silicon a-Si:H allows one to achieve the entrance window...

Full description

Saved in:
Bibliographic Details
Published inJournal of physics. Conference series Vol. 1400; no. 5; pp. 55056 - 55060
Main Authors Bazlov, N. V., Derbin, A. V., Drachnev, I. S., Gicharevich, G. E., Kotina, I. M., Konkov, O. I., Pilipenko, N. V., Chmel, E. A., Abolmasov, S. N., Terukov, E. I., Unzhakov, E. V.
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2019
Subjects
Amorphous silicon
Electric contacts
Electrical properties
Heterostructures
Lithium
Physics
Sensors
Surface resistivity
Thickness
Online AccessGet full text

Cover

More Information
Summary:Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silicon a-Si:H allows one to achieve the entrance window thickness 3 - 4 orders of magnitude smaller than the lithium-side entrance window of standard Si(Li) detectors. The films of amorphous silicon were synthesized with MASD (magnetron assisted silane decomposition) method in mixture of SiH4 (25%) and Ar (75%) gases. Lithium layer surface resistivity and silicon target type (n- or p-) affection on electrical properties of Si(Li) detector contact produced were studied. The investigation performed had led to a technology of Si(Li) detector production with thickness of the entrance window on the diffusive lithium layer side below 0.1 µm.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1400/5/055056