The Kondo effect in 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures

Unusual observation of the Kondo effect in two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures is reported. The temperature-dependent zero-field resistivity data exhibited an upturn below 120 K, while the standard low-temperature w...

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Published inJournal of physics. Conference series Vol. 1389; no. 1; pp. 12019 - 12025
Main Authors Chumakov, N K, Chernykh, I A, Davydov, A B, Ezubchenko, I S, Grishchenko, Yu V, Lev, L L, Maiboroda, I O, Strocov, V N, Valeyev, V G, Zanaveskin, M L
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2019
Subjects
Aluminum gallium nitrides
Electron gas
Electrons
Gallium nitrides
Heterostructures
High electron mobility transistors
Kondo effect
Low temperature
Magnetic materials
Magnetoresistance
Magnetoresistivity
Physics
Semiconductor devices
Temperature dependence
Transistors
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Summary:Unusual observation of the Kondo effect in two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures is reported. The temperature-dependent zero-field resistivity data exhibited an upturn below 120 K, while the standard low-temperature weak-localization behaviour was revealed at T → 0. Magnetotransport characterization was carried out in the magnetic fields up to 80 kOe, applied perpendicular to the 2DEG plane, in the temperature range 1.8 ÷ 300 K. Negative low-temperature magnetoresistance with a magnitude of order of 1 % was detected. The data set is analysed in the frame of the multichannel Kondo model for d0-magnetic materials.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1389/1/012019