Device Simulation of Highly Stable and 29% Efficient FA0.75MA0.25Sn0.95Ge0.05I3-Based Perovskite Solar Cell

• Published in: Nanomaterials (Basel, Switzerland) Vol. 13; no. 9; p. 1537
• Main Authors: Sabbah, Hussein, Baki, Zaher Abdel
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 03.05.2023; MDPI
• Subjects: Absorbers; Capacitance; Circuits; Commercialization; Efficiency; Electron transport; Energy; Energy conversion efficiency; Energy levels; Germanium; Lead content; Lead free; Magnesium; Magnesium oxide; Metal oxides; Open circuit voltage; Oxidation; Perovskites; Photovoltaic cells; Polystyrene; Polystyrene resins; Short circuit currents; Short-circuit current; Simulation; Software; Solar cells; Superconductors (materials); Thickness; Work functions; Zinc oxide; lead-free perovskite; Sn:Ge perovskite; power conversion efficiency; SCAPS simulation; photovoltaics; solar cell; thin films
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano13091537

A new type of perovskite solar cell based on mixed tin and germanium has the potential to achieve good power conversion efficiency and extreme air stability. However, improving its efficiency is crucial for practical application in solar cells. This paper presents a quantitative analysis of lead-free FA MA Sn Ge I using a solar cell capacitance simulator to optimize its structure. Various electron transport layer materials were thoroughly investigated to enhance efficiency. The study considered the impact of energy level alignment between the absorber and electron transport layer interface, thickness and doping concentration of the electron transport layer, thickness and defect density of the absorber, and the rear metal work function. The optimized structures included poly (3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS) as the hole transport layer and either zinc oxide (ZnO) or zinc magnesium oxide (Zn Mg O) as the electron transport layer. The power conversion efficiency obtained was 29%, which was over three times higher than the initial structure. Performing numerical simulations on FA MA Sn Ge I can significantly enhance the likelihood of its commercialization. The optimized values resulting from the conducted parametric study are as follows: a short-circuit current density of 30.13 mA·cm ), an open-circuit voltage of 1.08 V, a fill factor of 86.56%, and a power conversion efficiency of 28.31% for the intended solar cell.