Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the...

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Published inMaterials Vol. 5; no. 12; pp. 2917 - 2926
Main Authors Shi, Yunbo, Guo, Hao, Ni, Haiqiao, Xue, Chenyang, Niu, Zhichuan, Tang, Jun, Liu, Jun, Zhang, Wendong, He, Jifang, Li, Mifeng, Yu, Ying
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.12.2012
MDPI
Subjects
Fourier transforms
GaAs-on-Si
MEMS sensors
Microelectromechanical systems
Microscopy
Molecular beam epitaxy
Optimization
Residual stress
Sensors
Transistors
Beijing China
United States > US
China
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Summary:Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma5122917