MOCVD of highly conductive CdO thin films

• Published in: Journal of materials science. Materials in electronics Vol. 15; no. 6; pp. 369 - 372
• Main Authors: ELLIS, D. M, IRVINE, S. J. C
• Format: Journal Article
• Language: English
• Published: Norwell, MA Springer 01.06.2004; Springer Nature B.V
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Deposition; Exact sciences and technology; Film growth; Glass substrates; Grain size; Indium tin oxides; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optimization; Organic chemicals; Oxides; Physics; Spreading; Thin films; Transmittance; Grain size; Cadmium oxides; Electrical conductivity; Transition element compounds; Roughness; Fabrication property relation; Absorption coefficients; MOCVD; Spreading resistance; Film growth; Thin films; CVD; Energy gap
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1023/B:JMSE.0000025680.45331.aa

Thin films of cadmium oxide have been deposited onto alumino-silicate glass substrates by atmospheric pressure metal organic chemical vapor deposition using DMCd and n-butanol, a novel oxygen source. Studies were conducted to evaluate how different conditions such as temperature and precursor concentration influenced the film growth. Film characterization showed that at an optimum temperature range of 270-290 °C, CdO exhibits low spreading resistance of 17.1 Ω per square, for a 400 nm film, compared with 10 Ω per square for 1.1 μm indium tin oxide film, and high transmittance, between 600 and 900 nm, up to 90% with a band gap of 2.4 eV. Within this optimum temperature range, the grain size and surface roughness are shown to be a minimum.[PUBLICATION ABSTRACT]