An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs

• Published in: IEEE transactions on electron devices Vol. 54; no. 9; pp. 2562 - 2565
• Main Authors: Granzner, R., Schwierz, F., Polyakov, V.M.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.09.2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 2-D quantum confinement; Analytical models; Applied sciences; Asymptotic properties; Compact modeling; Confinement; Cross sections; Electronics; Exact sciences and technology; fin-type field-effect transistor (FinFET); Geometry; Logic gates; Mathematical analysis; Mathematical model; Mathematical models; MOSFETs; multiple-gate (MG) MOSFETs; Quantum confinement; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Threshold voltage; Transistors; trigate MOSFET; Voltage threshold; MOSFET; threshold voltage; Self consistency; Quantum effect; Poisson equation; Dual gate transistor; Compact design; Two dimensional model; Modeling; Schrödinger equation; Self aligned technology; Silicon on insulator technology; Field effect transistor; fin-type field-effect transistor (FinFET); 2-D quantum confinement; Compact modeling; Analytical method; multiple-gate (MG) MOSFETs; trigate MOSFET; Comparative study
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2007.902167

An analytical model describing the effects of 2-D quantum-mechanical carrier confinement on the threshold voltage V th of multiple-gate MOSFETs with rectangular cross section is developed. The model is verified by a comparison with self-consistent solutions of 1-D and 2-D Schroumldinger and Poisson equations. It is shown that: 1) the model results asymptotically approach the case of 1-D confinement in single-gate silicon-on-insulator or double-gate MOSFETs if one body dimension becomes larger than 20 nm and 2) the effect of 2-D confinement is remarkably stronger than a simple combination of two 1-D quantization effects.