Advanced thin-film chip concepts for efficient InGaN solar cells

• Published in: Physica status solidi. A, Applications and materials science Vol. 212; no. 9; pp. 2053 - 2058
• Main Authors: Koch, Holger, Niebling, Tobias, Pietzonka, Ines, Scholz, Dominik, Kalisch, Holger, Vescan, Andrei, Lugauer, Hans-Jürgen
• Format: Journal Article
• Language: English
• Published: Weinheim Blackwell Publishing Ltd 01.09.2015; Wiley Subscription Services, Inc
• Subjects: chip technology; Chips; concentrated photovoltaic; Indium gallium nitrides; InGaN; Magnesium; Materials science; nitride; Photovoltaic cells; solar cell; Solar cells; Solar energy; Thin films; V-chip
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201532064

Two chip concepts based on thin‐film technology are presented and compared regarding their suitability for concentrating photovoltaic applications. The main difference is given by the n‐contact design: the first concept relies on a metal grid (MG) while the second one is based on vias (V) connected from the bottom of the solar cell. Although the MG‐chip demonstrated a better performance at low solar concentrations, the V‐chip was found to be more efficient at high concentrations being the relevant operation range for InGaN‐based solar cell applications. Detailed investigations of J–V characteristics applying varied light concentrations revealed a significantly lower series resistance as the main advantage of the V‐concept leading to considerably better fill factors at high solar concentrations.