Synthesis of Antimony-Based Nanowires Using the Simple Vapor Deposition Method

• Published in: Chemphyschem Vol. 13; no. 10; pp. 2585 - 2588
• Main Authors: Zi, Yunlong, Zhao, Yanjie, Candebat, Drew, Appenzeller, Joerg, Yang, Chen
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 16.07.2012; WILEY‐VCH Verlag; Wiley
• Subjects: Chemistry; Colloidal state and disperse state; doping; epitaxial; Exact sciences and technology; GaSb; General and physical chemistry; InSb; nanowires; Physical and chemical studies. Granulometry. Electrokinetic phenomena; vapor deposition; Scanning electron microscopy; Gold; Growth; Nanoparticle; Epitaxy; In situ; Doping; GaSb; Indium Antimonides; Tellurium; Deposition process; Substrate; Electrical measurement; Vapor deposition; Transmission electron microscopy; Synthesis; epitaxial; nanowires; InSb; Gadolinium Antimonides; Nanostructured materials
• ISSN: 1439-4235; 1439-7641
• DOI: 10.1002/cphc.201101042

III–V nanowires have attracted plenty of attention because of their potential outstanding performance in a wide range of applications. However, compared to other III–V nanowires, the synthesis of high quality Sb‐based nanowires is less developed, which obstructs the progress towards further applications. In this study we report high quality GaSb and InSb nanowires synthesized by a simple vapor deposition method. Epitaxial growth of nanowires on growth substrates is demonstrated. Te doped GaSb nanowires are achieved through in situ doping during the vapor deposition process. Electrical measurements of nanowire field‐effect transistors show high performance of the synthesized InSb nanowires. GaSb and InSb nanowires: Vapor deposition is used for the synthesis of high quality GaSb and InSb nanowires. Epitaxial growth and doping capability are also demonstrated. The high on‐currents of InSb nanowire field‐effect transistors qualify nanowires synthesized for electronic applications.