Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition

High-quality 4H-SiC C-face epitaxial layers have been grown by a low-pressure, horizontal hot-wall type CVD system. A specular surface morphology was obtained at a substrate temperature of about 1600 C and a C/Si ratio of 1.5 or less. The site-competition behavior is observed in the doping process o...

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Published inJapanese Journal of Applied Physics Vol. 42; no. Part 2, No. 6B; pp. L637 - L639
Main Authors Kojima, Kazutoshi, Suzuki, Takaya, Kuroda, Satoshi, Nishio, Johji, Arai, Kazuo
Format Journal Article
LanguageEnglish
Published 15.06.2003
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Summary:High-quality 4H-SiC C-face epitaxial layers have been grown by a low-pressure, horizontal hot-wall type CVD system. A specular surface morphology was obtained at a substrate temperature of about 1600 C and a C/Si ratio of 1.5 or less. The site-competition behavior is observed in the doping process of C-face epitaxial growth at a low pressure of 250 mbar and C/Si ratios between 0.6 and 3. The lowest residual donor concentration of 7 x 1014 cm-3 is obtained at a C/Si ratio of 3. The optimal conditions for growing a C-face epitaxial layer having both a good surface morphology and reduced residual impurity concentration are discussed. 13 refs.
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ISSN:0021-4922
DOI:10.1143/JJAP.42.L637