Radiation damage to amorphous carbon thin films irradiated by multiple 46.9 nm laser shots below the single-shot damage threshold
High-surface-quality amorphous carbon (a-C) optical coatings with a thickness of 45 nm, deposited by magnetron sputtering on a silicon substrate, were irradiated by the focused beam of capillary-discharge Ne-like Ar extreme ultraviolet laser ( CDL = capillary -discharge laser; XUV = extreme ultravio...
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Published in | Journal of applied physics Vol. 105; no. 9; pp. 093117 - 093117-6 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Institute of Physics
01.05.2009
|
Subjects | |
Online Access | Get full text |
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Summary: | High-surface-quality amorphous carbon (a-C) optical coatings with a thickness of 45 nm, deposited by magnetron sputtering on a silicon substrate, were irradiated by the focused beam of capillary-discharge Ne-like Ar extreme ultraviolet laser (
CDL
=
capillary
-discharge laser;
XUV
=
extreme
ultraviolet, i.e., wavelengths below 100 nm). The laser wavelength and pulse duration were 46.9 nm and 1.7 ns, respectively. The laser beam was focused onto the sample surface by a spherical Sc/Si multilayer mirror with a total reflectivity of about 30%. The laser pulse energy was varied from 0.4 to
40
μ
J
on the sample surface. The irradiation was carried out at five fluence levels between 0.1 and
10
J
/
cm
2
, accumulating five different series of shots, i.e., 1, 5, 10, 20, and 40. The damage to the a-C thin layer was investigated by atomic force microscopy (AFM) and Nomarski differential interference contrast (DIC) optical microscopy. The dependence of the single-shot-damaged area on pulse energy makes it possible to determine a beam spot diameter in the focus. Its value was found to be equal to
23.3
±
3.0
μ
m
using AFM data, assuming the beam to have a Gaussian profile. Such a plot can also be used for a determination of single-shot damage threshold in a-C. A single-shot threshold value of
1.1
J
/
cm
2
was found. Investigating the consequences of the multiple-shot exposure, it has been found that an accumulation of 10, 20, and 40 shots at a fluence of
0.5
J
/
cm
2
, i.e., below the single-shot damage threshold, causes irreversible changes of thin a-C layers, which can be registered by both the AFM and the DIC microscopy. In the center of the damaged area, AFM shows a-C removal to a maximum depth of 0.3, 1.2, and 1.5 nm for 10-, 20- and 40-shot exposure, respectively. Raman microprobe analysis does not indicate any change in the structure of the remaining a-C material. The erosive behavior reported here contrasts with the material expansion observed earlier [
L. Juha
,
Proc. SPIE
5917
,
91
(
2005
)
] on an a-C sample irradiated by a large number of femtosecond pulses of XUV high-order harmonics. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.3117515 |