Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers

• Published in: Nature photonics Vol. 6; no. 9; pp. 610 - 614
• Main Authors: Justice, John, Bower, Chris, Meitl, Matthew, Mooney, Marcus B., Gubbins, Mark A., Corbett, Brian
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 01.09.2012; Nature Publishing Group
• Subjects: 639/624/1020; 639/624/1075/1079; 639/624/399/1099; Applied and Technical Physics; Devices; Electronics; Fabrication; Gallium arsenide; Lasers; letter; Photonics; Physics; Physics and Astronomy; Quantum Physics; Silicon; Silicon substrates; Strategy
• ISSN: 1749-4885; 1749-4893
• DOI: 10.1038/nphoton.2012.204

The hard-drive and electronic industries can benefit by using the properties of light for power transfer and signalling. However, the integration of silicon electronics with lasers remains a challenge, because practical monolithic silicon lasers are not currently available. Here, we demonstrate a strategy for this integration, using an elastomeric stamp to selectively release and transfer epitaxial coupons of GaAs to realize III – V lasers on a silicon substrate by means of a wafer-scale printing process. Low-threshold continuous-wave lasing at a wavelength of 824 nm is achieved from Fabry–Pérot ridge waveguide lasers operating at temperatures up to 100 °C. Single and multi-transverse mode devices emit total optical powers of >60 mW and support modulation bandwidths of >3 GHz. This fabrication strategy opens a route to the low-cost integration of III – V photonic devices and circuits on silicon and other substrates. The realization of GaAs lasers on a silicon substrate using a print transfer process offers an alternative wafer-bonding technique for the hybrid integration of optoelectronics.